| PART |
Description |
Maker |
| MPSH10 MPSH11 ON2346 MPSH10-D |
VHF/UHF Transistors NPN Silicon
CASE 294, STYLE 2 TO2 (TO26AA)
From old datasheet system
VHF/UHF Transistors(NPN Silicon)
(MPSH10 / MPSH11) VHF/UHF Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 1SV233 |
INLET, IEC, SWITCHED, RED; Connector type:IEC; Gender:Plug; Current rating:10A; Voltage rating, AC:250V; Outlets, No. of:1; Termination method:Solder
PIN Diode for VHF/ UHF/ AGC Use
PIN Diode for VHF UHF AGC Use
PIN Diode for VHF, UHF, AGC Use
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2N4440 SD1060 RF41 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C Si, RF SMALL SIGNAL TRANSISTOR, TO-60
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 3SK225 E001704 |
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF, UHF RF AMPLIFIER APPLIATIONS) N通道双栅MOS型（电视，调频收音机甚高频射频，超高频射频放大器APPLIATIONS
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV FM TUNER VHF RF UHF RF AMPLIFIER APPLIATIONS)
TV TUNER, VHF RF AMPLIFIER APPLICATIONS FM TUNER APPLICATIONS TV TUNER, UHF RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
|
Advanced Semiconductor, Inc.
ASI
|
| MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| 1SV25112 EN4403B EN4403 |
PIN Diode, 50V, 50mA, rs=max 4.5 Ohm, Dual CP
PIN Diode for VHF, UHF, AGC Applications
PIN Diode for VHF, UHF, AGC Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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